17pB07 格子整合ZrB_2基板上へのGaN低温成長(半導体エピ(3),第35回結晶成長国内会議)
2005 年 32 巻 3 号 p. 146-
詳細
2005 年 32 巻 3 号 p. 146-
We have grown GaN on nearly lattice matched ZrB_2 substrates at low substrate temperatures by the use of PLD. We have found that high quality GaN grows on ZrB_2 substrates with the layer-by-layer mode even at room temperature. This success can be attributed to the suppression of interfacial reaction between GaN and ZrB_2.
