2006 年 33 巻 4 号 p. 203-
We have grown GaN and AlN films on atomically flat on-axis 4H- and 6H-SiC (0001) substrates at room temperature (RT) by PLD and investigated their growth mechanisms. We have found that the epitaxial growth of AlN and GaN films proceeds in the layer-by-layer mode even at RT and the surfaces were covered with atomically flat terraces separated by straight steps.