It is known that the growth process of semiconductors depends on the growth conditions such as temperature, partial pressures of gaseous sources, and growth orientation. However, there has been little study of the relation between the growth process and the growth conditions. In 2001, we developed an ab initio based-approach that incorporates gas-phase free energy. Using the theoretical approach, we can discuss the influence of the growth conditions on the stability of surface reconstruction. In this research, we propose a newly improved thermodynamic analysis that incorporates surface energies obtained by ab initio calculations. The theoretical approach was applied to study the growth processes of InN(0001), (000-1), (10-10) and (11-20) by MOVPE. Calculation results reproduced the difference in optimum growth temperature.
