2016 年 43 巻 4 号 p. 239-243
Suppression techniques of the GaN crystal nucleation in the Na flux method has become an important technique for establishing a high-quality GaN single crystal growth technology. By technologies capable of promoting GaN crystal nucleation is developed, Na flux method allows application to fabrication of GaN polycrystals as well as bulk GaN single crystal.
We report on the high-density aggregation of GaN polycrystals, fabricated using the Na flux method under continuous propeller stirring. It is seen from the XRD profile that the aggregation of GaN polycrystals was randomly directed when grown under continuous stirring conditions using propeller at 100 rpm. The relative bulk density and real density of the aggregation of polycrystals content to the density of the bulk GaN crystal were 92.1% and 98.4%, respectively. It is noted that the use of a propeller for continuous stirring in the Na flux method has the possibility of fabricating a high-quality raw materials for various methods of GaN-based materials.