AlN基板上AlGaNヘテロ構造UVCレーザーダイオード

抄録

  UV−C laser diodes (LDs) have potential applications in the fields of healthcare, sensing and processing lasers. Our group has demonstrated UV−C LDs with an AlGaN−based heterostructure by pulsed current injection at room temperature. This is the first report of current−driven LDs in the UV−C wavelength range. The key technologies are the highly conductive p-clad layer using polarization doping and the low defect AlGaN heterostructures using single crystal AlN substrate. The 2-inch based on-wafer LD formation technique was also investigated, such as mirror formation by etching and high-reflection coatings, which are the basis for large-scale integration.