主催: The Japan Society of Applied Physics
会議名: Asia-Pacific Conference on Semiconducting Silicides and Related Materials - Science and Technology Towards Sustainable Electronics (APAC Silicide 2016)
開催地: Fukuoka, Japan
開催日: 2016/07/16 - 2016/07/18
A double-layer heterostructure with embedded into single-crystalline silicon matrix nanocrystallites of gallium antimonide was grown. GaSb was formed by solid phase epitaxy method using Ga-Sb stoichiometric mixture of 2-nm-thick and a stepped annealing from 200 to 500 °C. The obtained nanocrystallites have a concentration of 7.1 × 1010 cm−2, a height of 4.6 nm and lateral dimensions of 16–20 nm. The GaSb nanocrystallites were covered with silicon layer using molecular beam epitaxy in two stage: 40-nm-thick at 300 °C followed by 60-nm-thick at 500 °C.