抄録
This paper compares drive characteristics of an induction machine with an implemented voltage unbalance compensator in implementing SiC and GaN power devices. Generally, voltage unbalances in the power grid line have been a serious problem for industrial motors due to over currents, torque ripple and local heating causes damage insulating material of stator windings. The authors have proposed the induction machine with the implemented voltage unbalance compensator which is consists of an open-winding induction machine and the voltage unbalance compensator (VUC). We have demonstrated effectiveness the proposed system effect on the torque ripple suppression at the voltage unbalance occurs using simulation in past paper.
In recent years, SiC and GaN power devices have appeared as next-generation power devices. In addition, it is expected that they are applied to various applications instead of Si power device. However, it is difficult to distinguish between SiC and GaN power devices according to the applications because there are power devices with the same voltage rating and similar on-resistance. In order to determine which power device is preferable for the proposed system, this paper compared the loss when implementing SiC and GaN power devices. We also estimated the junction temperature and compared the size of the cooling device. As a result, we clarified the differences between SiC and GaN power devices in the proposed application.
https://ror.org/02278tr80 
