抄録
In recent years, LED and power semiconductor devises are spread rapidly towards the realization of the energy-saving society. Chemical mechanical polishing (CMP) is an important technology in the manufacturing process. In the CMP, the Preston's low is beneficial formula for estimating the removal rate, however, this formula only includes the mechanical parameters; the polishing pressure and the relative velocity. Here, it is well known that the slurry flow behavior has high correlation with the removal rate. This paper reveals the slurry flow in the contact interface between the polishing pad and the substrate. Furthermore, we discuss the novel mathematical evaluation of the removal rate owing to the multiple correlation analysis. As a result, we propose an innovative formula for predicting the removal rate by using the slurry and polishing pad characteristics.
