抄録
This paper presents a method in which a high speed rotating silicon wafer is ground by continuous infeed of cup type grinding wheel. Some grinding results of silicon wafers by this method are compared with those of conventional face grinding method and creep feed face grinding method. By these experiments, following results are obtained on silicon wafer grinding : (1) Silicon wafer can be ground normally under the condition of zero speed at its center and high speed such as 314 m/min at its periphery. (2) Surface roughness and its variation are equal to or less than those of conventional face grinding and creep feed face grinding. (3) Straightness of ground surface is remarkably improved compared with that of conventional face grinding and creep feed face grinding.
