1993 年 59 巻 8 号 p. 1307-1312
Etching mechanism and characteristics of CW-CO2-laser induced thermo-chemical etching of ceramics (ZrO2) in halogen-containing gas (CF4) were investigated. It was presumed that the etching velocity depends on activation energy of gas molecule dessociation and laser irradiated surface temperature. From the computer simulation of the etching process and the experiment, following results were obtained. The etching process can be induced on the material surface under the melting point. Depth of the thermal affected layer of the etched surface can be controlled by the etching parameter, activation energy, laser power and laser irradiation time, so laser machining of ceramics without thermal affected layer is possible.