ClF₃ガス等方性ドライエッチングのマイクロマシニングへの応用研究

抄録

Within the micromachining field, which is based on semiconductor manufacturing technology, wet etching and plasma etching are generally used as the isotropic etching for producing movable parts on silicon wafer. However, these methods have the following disadvantages. 1) Wet etching; (1) Dynamic damage such as surface tension occurs, (2) It is difficult to perform in-line etching, 2) Plasma etching; (1) Thermal damage due to plasma, (2) Detoxication at high-temperature is required. To solve them, it is proposed a new isotropic dry etching using CIF, gas. The following results are obtained experimentally; (1) Si can be etched isotropically by CIF₃ gas at room temperature and atmospheric pressure, (2) Ni film electroplated and Cr film sputtered are useful as makes for CIF, gas dry etching, (3) Ni rotor electroplated on Si could be released by the proposed CIF₃ gas etching.