バブルランアウト法を用いたチャージドウォールの評価

抄録

A new potential well measurement method, using the bubble run-out phenomena, has been discussed for its application to observe charged wall behavior as well as to measure potential well depth itself. The method is applied to bubbles in ion-implanted propagation patterns on 1 μm bubble garnet films with different magnetostriction constants. Bubble run-out directions are found to be reflected by the strength of stress relaxation induced magnetic anistropies along ion-implantation pattern edges. Charged wall length and its stray field distribution are also estimated by the method. It is concluded that this method is one of the most useful tools for operation error mode analysis in ion-implantion bubble device development.