抄録
Matteucci effect was studied on Co-Si-B amorphous wires with negative magnetostriction. It has been shown and confirmed exprimentally that the Matteucci pulse voltage appearing between wire ends is proportional to the length of propagating domain boundary in a reverse way to pulse voltage associated with Barkhausen discontinuities. An attempt was made to increase Matteucci voltage with thermal treatment. Simultaneous application of torsion and tension during annealing was found to increase Matteucci voltage by one order of magnitude over that of as-quenched wires.
