抄録
Fe and Fe-N films were deposited on GaAs (100) substrates using an MBE system. 100Å thick Fe single crystal films were grown at substrate temperatures between 300°C and 400°C at a rate of 1Å/sec. Subsequently Fe-N films with a thickness of 1000Å were then grown at a rate of 0.04Å/sec. α″(Fe16N2) phase was grown epitaxially on Fe single crystal film at 100°C. The relationship among crystal orientations for α″(Fe16N2), α-Fe and GaAs was (001)Fe16N2// (110)Fe//(110) GaAs, [110]Fe16N2//[001]Fe//[001]GaAs. Saturation magnetic flux density (Bs) of this film was found to be 2.20T, which was lower than the expected value of 2.83 T, although the value was 10% higher than for Fe single crystal films on GaAs (100).
