レーザ照射フェライトメッキ法によるFe₃O₄膜の作製とマスクレス · パターニング

抄録

By irradiating glass substrate with an Ar-laser (λ=514.5 nm) beams, Fe₃O₄ films were deposited in an aqueous solution at a rate as high as 2.35 μm/min. By synchronously moving substrate while plating. we successfully drew a pattern (roman letters and dots) of Fe₃O₄ film by selected area growth without using any masks. This technique is useful for fabricating fine-patterned film devices (e.g., microwave circulators and isolators) using as substrate such non-heat-resistant materials as GaAs ICs.