抄録
MnSb films prepared on GaAs(100) and (111)B substrates by atomic-were hydrogen-assisted hot-wall epitaxy technique. Atomic-force microscopy observation revealed a drastic improvement in the surface flatness of MnSb films grown with irradiation of atomic hydrogen. X-ray diffraction showed that the growth surface of MnSb films was (10.1) in those grown on GaAs(100) substrates, and (00.1) in those grown on GaAs(111)B substrates. The spectra of the optical reflectivity and the polar magneto-optical Kerr effect were measured in the films obtained and analyzed in terms of the electric conductivity tensor.
