III-V 族希薄磁性半導体 GaMnAs のエピタキシャル成長と磁性・電気伝導特性

抄録

A new III-V based diluted magnetic semiconductor, GaMnAs has been successfully grown on (001) GaAs using low-temperature molecular beam epitaxy. The GaMnAs films have p-type conduction with hole concentrations ranging from mid 10¹⁷ to low 10²⁰ cm^-3, exhibiting ferromagnetic ordering at low temperatures. Magnetic and magnetotransport properties are studied at low temperature.