1999 年 23 巻 1_2 号 p. 93-95
(Alx Ga1-x)l-yMnyAs films were grown by molecular-beam epitaxy at various Al compositions. The Al+Ga flux andMn flux were kept constant. In the case of the growth at the Al composition up to 0.5, homogeneous (AlxGa1-x)l-yMnyAs alloy was grown with zincblende structure, whereas inhomogeneous films with both zincblende (AlxGal-x)1-yMnyAs and hexagonal MnAs became amorphous thereafter. The Mn composition of the (AlxGal-x)l-yMnyAs films increased from 0.03 to 0.06 as the Al composition increased from 0 to 0.5. These results indicate that the incorporation rate of Mn atoms into (AlxGa1-x)l-yMnyAs films increases with the increase of the Al composition. The linear relationship was observed between the lattice constant and the Mn composition of the (AlxGa1-x)l-yMnyAs films, independent of the Al composition.
