NiCoスパッタ膜の磁気抵抗効果の水素中焼鈍の影響

抄録

Magnetoresistive effect of NiCo films prepared by r.f. diode sputtering was investigated for the application upon magnetic sensors and magnetic thin film heads (MR heads).
The sputtered films without heat treatment may be characterized by small value (≤1.1%) of magnetoresistive effect due to its small value of Δρ and high electrical resistivity ρ. It was found that annealing in hydrogen is substantially effective to reduce the oxide and to bring the grain growth in films, and it results in large value of magnetoresistive effect because of decreased value of ρ and increased value of Δρ. The films of which Ni concentration is in range 60 to 80 weight percent showed 4.5 ∼ 5.3% of magnetoresistive effect as a result of annealing in hydrogen at 400°C for 60 min.