(110) 磁性ガーネット膜へのイオン注入による磁気異方性の変化

抄録

Magnetic anisotropy changes due to He⁺ ion implantation into (110) oriented garnet films have been studied. The induced magnetic anisotropy changes, which were measured by ferromagnetic resonance, are related to the two magnetostriction coefficients, λ₁₀₀ and λ₁₁₁, and also to the degree of suppression of growth induced anisotropy. The two kinds of (110) Eu₃Fe₅O₁₂ films, with and without growth induced anisotropy, were studied in detail from the viewpoint of implantation damage level. For small damage level, the implantation induced change of orthorhombic anisotropy parameters A and B agrees for both films with and without growth induced anisotropy. However, there are clearly significant differences between the both films for heavier damage levels. He⁺ ion implantation effects were also investigated for various garnet compositions, such as YSmLuBiCaGe, YTmBiGa, GdSmTmCaGe, etc.