Resistive Instabilities in Semiconductor Plasmas
1965 年 20 巻 6 号 p. 1072-1079
詳細
1965 年 20 巻 6 号 p. 1072-1079
Resistive type instabilities in semiconductor plasmas with μe>>μh are studied in the microwave frequency range for the cases of B0||k and B0⊥k. Instabilities are created by the slower waves (in the drifting electrons) that interact with the resistive holes. It is shown that the growing wave due to the instabilities starts to appear at a frequency well below the electron-lattice collision frequency νe in both of the above cases-typically one tenth to one hundredth of νe. The more specific conditions are given in the text.
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