The Transverse Galvanomagnetic Properties of Dilute Bi-Sn, Bi-Te and Bi-As Alloys

抄録

The measurements were made on the transverse galvanomagnetic effects of dilute Bi-Sn, Bi-Te and Bi-As alloys at 4.2°K. These electrical properties showed remarkable differences in the concentration dependence of the impurities depending on their valencies. These galvanomagnetic effects were studied in terms of the ellipsoidal model of pure bismuth. From the Hall effect measurement on Bi-Sn alloys as a function of tin concentration, the direct energy gap between the conduction and the valence band was estimated to be about 0.029 eV.