The Structure, the Formation and the Activation Energies of a Domain Wall in Crystals Undergoing the First Order Transition

抄録

The structure, the formation and the activation energies of a domain wall in crystals are discussed on the basis of analyses of a first order transition model. In the close vicinity of the transition temperature, the domain wall is considerably extended. For the estimation of the activation energy of a thick domain wall the method of the contour integral was adopted. It has turned out that the relative stability of an even and an odd walls varies with temperature.