抄録
The optimal condition suitable for using a quadrupole SIMS (Q-SIMS) instrument to measure the Si concentration in GaN layers for both selectively isotopic Si-implanted GaN and epitaxially Si-doped GaN was presented. The detection of 30Si14N- molecular ions under Cs+ primary ion bombardment realized the best dynamic range and the lowest detection limit for Q-SIMS analysis of Si in GaN layers. The detection limits of selectively isotopic 30Si and the total amount of Si naturally occurring isotopes in GaN layers can reach 2 × 1014 cm-3 and 8 × 1015 cm-3, respectively. We concluded that a Q-SIMS instrument was applicable for the analysis of the Si depth distribution in GaN layers.
