抄録
We investigated the natures of chemical bond at silicide/silicon interfaces for four silicide films (CoSi2, NiSi2, TiSi2 and WSi) using X-ray photoelectron spectroscopy (XPS), with the purpose of getting insight on the nature of silicide/silicon interface. In the case of CoSi2 and NiSi2, the difference between XPS binding energy of metal and silicon peaks increased at silicide/silicon interfaces, whereas the difference for TiSi2 and WSi decreased. The XPS binding energy differences between metal and silicon peaks before and after interfaces had good correlation with work function of metal, and relevance to Schottky barrier height at interface.
