抄録
It was shown that MEIS can provide reliable thickness measurement of nm gate oxides down to 1∼2 nm range with additional interface strain profiles which show interesting correlations with electrical properties. Its absolute quantification capability with atomic layer depth resolution can be utilized to develop delta doped reference thin films especially for SIMS shallow junction profiling. It was discussed that MEIS has quite high potential to contribute to the further development of nm ultrathin films with atomic resolution to meet the challenging and urgent demands from nano-electronics technology.
