抄録
In depth profiling measurements with AES, XPS, and SIMS, the sputter etching rate is one of the important parameters. We have proposed the mesh-replica method (J. Surf. Anal. 5, 188 (1999) ) to measure the actual sputtered depth even for a wide sputtered area. SERD (Sputter etching rate database)project in SASJ has been developing the relative sputter etching rate database using this technique. In this report, we show the sputter etching rate ratios of Si to SiO2 by collaborating study, and they were determined to be 1.04±0.10 and 1.02±0.07 for the Ar+ ion beam energies of 1 keV and 3 keV, respectively. From the results, it was found that the sputter etching rates of Si were almost the same as those of SiO2.
