JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 77th JSAP Autumn Meeting 2016
Session ID : 16a-B10-1
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Formation of shallow junctions with high activation in n+/p and p+/n Ge using ion implantation and FLA
*Hideaki TanimuraHikaru KawarazakiShinichi KatoTakayuki AoyamaIppei KobayashiHiroshi OnodaYoshiki NakashimaTsutomu NagayamaNariaki HamamotoShigeki Sakai
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© 2016 The Japan Society of Applied Physics
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