JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 77th JSAP Autumn Meeting 2016
Session ID : 16a-B10-2
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Shallow and high activated junctions in n+/p Ge using FLA and O knocked on effect
*Hikaru KawarazakiHideaki TanimuraShinichi KatoTakayuki AoyamaIppei KobayashiHiroshi OnodaYoshiki NakashimaTsutomu NagayamaNariaki HamamotoShigeki Sakai
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Keywords: 16a-B10-2, Ge, FLA
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© 2016 The Japan Society of Applied Physics
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