JSAP Annual Meetings Extended Abstracts
Online ISSN : 2436-7613
The 65th JSAP Spring Meeting 2018
Session ID : 18a-E202-5
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Facet growth of GaN with low dislocation density using Ga,N double polarity by Hydride Vapor Phase Epitaxy
*Tatsuya EzakiYusuke ShigefujiNarihito OkadaKazuyuki Tadatomo
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© 2018 The Japan Society of Applied Physics
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