抄録
The submillimeter wavelength region is the last undeveloped spectral window in modern astronomy. Our purpose is to develop the photoconductive detector for 300μm band using GaAs epitaxial film. The final goal of our detector development is to obtain a Blocked Impurity Band (BIB) type detector. Ultra pure GaAs films have been grown reproducibly by the sliding boat method of Liquid Phase Epitaxy(LPE). The epitaxial films with the carrier density of 5.6×1013cm-3 and the mobility of 86600cm2/Vs at 77K were grown.
