抄録
In this study, ITO and TiO_2 films were deposited on sodalime glass, NaCl(100) and silicon(111) wafer. Microstructure of the deposited films, before and after post-annealing at 400℃ and 500℃, was analyzed by XRD. It has been found that; i) ITO: as deposited plane (222) was recognized only on silicon and glass substrates. After annealing, planes (211), (400), (440), and (622) were also observed on all substrates. The relative ratios of (400)/(222) on silicon and NaCl substrates were higher than on glass. ii) TiO_2: as deposited no indication of preferred plane were found. After annealing, planes (101), (004), (200), (105) and (211) and (622) were observed on silicon while only plane (101) on NaCl, and no structure observed on glass.
