1403 レーザーアニールプロセスの熱・構造連成解析(OS14.シリコンとシミュレーション(1),OS・一般セッション講演)
詳細
Heating of circular silicon wafer plate under laser annealing is modeled by Non-Linear FEM. Laser source is modeled by concave shaped plate with focus immediately beneath the wafer surface. Heat source is placed over the wafer surface with fixed temperature, and sinusoidal motion. The radiosity is calculated from the geometry around the heat source and the silicon wafer. The chronological change of temperature profile is reported under this situation.
