The Proceedings of The Computational Mechanics Conference
Online ISSN : 2424-2799
2013.26
Session ID : 109
Conference information
109 Device Simulation for Impacts of Stress-Induced Change of Intrinsic Carrier Density in nMOSFETs
Masaaki KOGANEMARU, Naohiro TADA, Toru IKEDA, Noriyuki MIYAZAKI
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Keywords: Drift-Diffusion Device Simulation, Intrinsic Carrier Density, Residual Stress, nMOSFET, Electron Mobility
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[in Japanese]
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© 2013 The Japan Society of Mechanical Engineers
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