抄録
As a semiconductor material, SiC crystalline has many advances in physical and electric properties in comparison with current Si crystalline. In recent years, studies on SiC processing have attracted increasing attentions as SiC is expected as the potential material for next generation power devices. However, machining of SiC is very difficult vecause of its extremely high hardness and chemical stability. This study aims to explore the possibility of machining or removal of SiC with aids of physical and chemical reactions.
