抄録
FAB (Fast Atom Beam) manufacturing is able to make a high-aspect-ratio structure. The manufacturing precision of line-and-space does not significantly decrease in the case of FAB manufacturing, when the distance between the mask and the substrate is of a limited length. In the present paper, a new method to make a line-and-space on the substrate by the use of FAB is first proposed. In this method, the mask with line-and-space is put on the substrate with slope. In the process of changing the slope of the mask, it is possible to change the line-and-space on the substrate. Next, the manufacturing process of the mask to make a nano-meter-order line-and-space on the substrate by the use to the FAB etching is proposed. Moreover, the mask is manufactured by the use of FAB and its performance during manufacturing is discussed.
