抄録
We have developed a new fabrication method of electro-chemical probe for scanning electro-chemical microscopy. In our method, a SiN film, which is used for a mask layer of successive LOCOS (Local Oxidation of Silicon) process, was deposited on a Si{100} wafer and patterned at bottom of an anisotropically etched pyramidal hole. Following LOCOS process formed a SiO2 film except for the area of the SiN film. After removing the SiN film, a gold layer was deposited and patterned; which was then covered with a sputtered SiO2 layer. Final Si substrate etching completed the process. Using this process, we have successfully formed an electro-chemical cantilever which has a small gold probe covered with SiO2 film except for the tip of the probe having the radius of nanometer order.
