抄録
The transparent electrodes on GaN were formed by the screen printing of indium tin oxide nanoparticle(ITOnp) pastes as wet process in place of sputter deposition of metal oxides as dry process. The ITO nps were synthesized by the controllled thermolysis of the mixture of indium complexes and tin complexes.The ITO nppastes were prepared by three-roll milling of the mixture of the solvent, the resin,and the ITO nps.The direct printing of ITO np pastes were carried out by screen printing on GaN substrates.After printing,the transparent conductive ITO film was formed by sintering at 850°C for 10 minutes under the atmospheric condition. The produced device emitted light when the on-voltage was exceeded.
