抄録
Polishing performances of mC^2 (low down force CMP), ECP-DI (Electro-Chemical Polishing in DI water) and ECP-C (Electro-Chemical Polishing in Chemical) are compared as a candidate of planarization technology for the next generation. Each planarization technology shows high removal rate under the low down force condition and excellent planarization performance. However, Dishing increases rapidly in ECP-DI and ECP-C after Cu Clear because of electro-chemical etching. In our experimental data, mC^2 is superior to ECP-DI and ECP-C for polishing performance. In addition, ECP-DI has large advantage for CoC, because ECP-DI doesn't basically use any chemical.
