21721 親水性膜と疎水膜に対するIPA乾燥効果(流動,OS.12 機械工学が支援する微細加工技術(半導体・MEMS・NEMS))

抄録

This paper describes the Drying method against hydrophobic and hydorophilic films during chemical mechaical polishing (CMP). Spin Rinse Dry (SRD) is general method previously in CMP Drying Process. But for the 65nm node, low-dielectric-constant (low-k) materials are used for the interlayer dielectric (ILD) film and low-k films are Hydrophobic that watermark generation occurs. To suppress the watermark, IPA Dry has been developed. Rotagoni Dry is a kind of the IPA Dry that conbinates Marangoni force and Wf rotation force. We forcus the Rotagoni Dry and investigate thd Drying effect on hydorophobic and hydorophilic films by comparing SRD with IPA Dry.