日本機械学会関東支部総会講演会講演論文集
Online ISSN : 2424-2691
ISSN-L : 2424-2691
セッションID: 117105
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117105 二層グラフェンの安定構造と電子的特性の解析(一般01 材料科学・材料力学1)
山田 洋揮新谷 一人
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会議録・要旨集 フリー

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Because the charge transport property of graphene is superior to that of silicon, graphene is expected to be a good material of the next generation for electronic devices, and attracts much attention of researchers. Single-layered graphene is a zero band gap semiconductor. Accordingly, techniques of adjusting its band gap are necessary to its application. One of such techniques will be the use of bilayer graphene. In this article, the stable structure of bilayer graphene is obtained by means of molecular dynamics. And the band structures of the local parts of the stable structure are calculated by means of first-principles calculation. It turns out that the magnitude of the band gap is changed by shifting the relative configuration of the two layers of bilayer graphene.
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© 2011 一般社団法人 日本機械学会
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