抄録
With the proposed Cu-CMP (Chemical Mechanical Polishing) method, laser beam is irradiated into the slurry on the silicon wafer coated with blanket copper layer. Moreover, after the fine particles in slurry are aggregated on the surface of the Cu wafer with optical radiation pressure, the polishing process is implemented. This paper describes about the result of an experiment of laser irradiation into the slurry on the Cu wafer. The phenomenon of SiO_2 particles aggregating with laser irradiation was observed, and conditions to create particle aggregation were investigated. This result indicated that the height of particle aggregation could be controlled by irradiation laser power. Furthermore, the properties of laser aggregation particles on copper layer were also examined. This gives that the aggregated mark closely contacts copper layer.
