Development of Chemo-Mechanical Grinding (CMG) Process : Surface and Sub-surface Analysis of Si Wafer Produced by CMG(M^4 processes and micro-manufacturing for science)

抄録

For the final finishing of single crystal Si wafers, unlike the conventional polishing, we have developed a dry fixed-abrasive process by effective use of solid-state reaction between the CeO_2 abrasives and Si. Si is removed in a form of complex cerium-oxygen-silicon when two materials are subject to the conditions of about 0.8 MPa pressure and 15 m/s relative velocity. The fabricated φ300mm Si wafers are examined on both surface and subsurface. The results show no defect or mechanical imperfection being introduced during fabrication, and far better quality than the achievables by CMP.