抄録
When nanoimprint lithography (NIL) is used for compound semiconductor, mechanical damage caused by imprinting pressure is a critical issue in view of device characteristics and its reliability. We demonstrate that no evident damage have been caused by imprinting in our process by using photoluminescence method and simulations. We also indicate that fabricated laser diodes show comparable characteristics and reliability with those fabricated by conventional electron-beam lithography process. NIL is substantially applicable to fabrication of compound semiconductor devices such as laser diodes.
