抄録
Recently, planarization of wiring layers has been important. A technique of planarizing the wiring surface is chemical mechanical polishing (CMP). Fullerenol and polyglycerol-functionalized nanodiamond particles are proposed as abrasive grains for Cu-CMP. In this study, the chemical reaction between copper and these nanoparticles is investigated. Elucidation of the mechanism to form the reacted layer in CMP is attempted. Raman spectra enhanced by surface plasmon is used. This method enables to obtain signals from the reaction system under the same environment as CMP. Measurement results provide the posibility that the reacted layer is formed by adsorption of reactive nanoparticles on copper surface in CMP.
