抄録
Characteristic of nanowire is gradually attracting many researchers with potential applications of nano devices, nano sensors, solar sells and so on. This paper describes fabrication and evaluation of high density Cu nanowire array grown in porous aluminum. To fabricate high density nanowire array, at first Ta and Cu films were evaporated on one side of Si wafer as a conductive working electrode. Nanowire array was formed via electrical deposition in copper sulfate aqueous solution. After etching in 2 M NaOH aqueous solution to remove porous aluminum, we obtained high density nanowire array on Si wafer perpendicular to its surface. High density Cu nanowires with average diameter of 200 nm, approximately, were observed by scanning electron microscope. In order to understand performances of Cu nanowire array, electrical and mechanical properties of them were studied in details.
