抄録
In the fine processing technology, the etching tolerance improvement of resists as a protective layer is required for higher performance in the dry etching process. One of improving approaches is the resist curing method for the etch selectivity. So, we have focused on the etch selectivity of Si/resist treated by vacuum UV curing process. By the results of previous studies, it is possible to improve the etch selectivity of the protective layer treated by the vacuum UV curing process. In this study, we investigated the improvement of etch selectivity by processing under a variety of etching conditions and the processing accuracy of Si microstructures protected by the cured resist.
