抄録
GaAs has characteristics which are a high-speed operation and low power consumption. So, GaAs is applied as a material of circuit elements and substrate of integrated circuit. When a devise is designed with a semiconductor material, electrical properties as carrier concentration, resistivity and mobility are important factors. A technique for accurately measuring those values is required. In this study, we attempted to evaluate resistivity and mobility of GaAs by microwave inspection method which can inspect a specimen with non-contact. The method can evaluate resistivity because amplitude of microwave reflected from a specimen is changed by conductivity of the specimen. In this paper, using the relationship of the electrical properties and Q factor, the electrical properties were evaluated. Linear relationships were observed in resistivity and Q factor obtained in the experiment. As the result, quantitative evaluation of resistivity and mobility with high precision were succeeded.
