プラズマ解析による表面活性化接合用FAB源の高性能化

抄録

The novel fast atom beam source (FAB) for surface-activated bonding (SAB) method was proposed in order to improve the lifetime of FAB sources. The proposed FAB source achieved the higher efficiency of Ar-FAB irradiation and less wear on the electrodes. This previously study indicated that the applied magnetic fields made the Ar ions converge on the irradiation port, increasing Ar irradiation efficiency. However, it was not measured and not clearly why the proposed FAB source achieved higher performance. In this study, we aim to reveal the factor of achievement high performance and to propose the new structure of the FAB source with much higher performance by plasma analysis. Electrostatic probe studies and the simulation for Ar plasma in the proposed source show that the electron and Ar⁺ density increase near the irradiation port. Moreover, increasing Ar⁺ flux only to the wall with irradiation port indicates improving Ar-FAB irradiation efficiency and suppressing Ar+ sputtering and carbon agglomerates on inside wall of the source.