基板へのパルスバイアス電圧印加によるガラス絶縁体上ta-CN_x膜成膜法の開発

抄録

For DLC films deposited by FCVA, the energy of the carbon ions can be controlled by controlling bias voltage applied to substrate, and properties of the film can be controlled. However, when the bias voltage is applied to an insulator substrate, the substrate surface is charged up, making it difficult to control the ion energy. In this study, we applied pulsed bias voltages to the glass substrate instead of DC bias voltages when depositing ta-CN_x films to prevent charging up. Properties of the deposited ta-CN_x films were evaluated by nanoindentation test, reflection spectroscopy and Raman spectroscopy to clarify the effects of the bias voltage application method and amplitude. As a result, it was found that the effect of the bias voltage amplitude on the insulator substrate was larger when the bias voltage was pulsed than when it was DC. It was also suggested that the application of pulsed bias voltages prevents the film peeling that occurred when DC bias voltages was applied.